Cluster Molecular Beam Epitaxy System for SiGe and CdZnS

The delivery and installation of a Cluster Molecular Beam Epitaxy System for SiGe and CdznS. The Cluster Molecular Beam Epitaxy System for SiGe and CdZnS will be purchased for the group Advance Nanomaterials & Devices (AND). The cluster includes a chamber for the growth of CdZnS buffer layers with the hexagonal crystal structure - and a chamber for the growth of high quality SiGe layers. The purpose of this MBE cluster is to grow planar hexagonal SiGe layers on wurtzite CdZnS buffer layers - such that the SiGe has a direct bandgap to enable light emission - which is normally not possible from these materials. The sample transfer between the loadlock - degas chamber and the growth chambers should be computer controlled and ideally...